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인정번호 (Accreditation No) KT218
기관명
(Organization Name)		 큐알티 주식회사
공인유효기간 2024-07-02 ~ 2028-07-01
주소 경기도 이천시 부발읍 경충대로 2091
소재지 경기도 이천시 부발읍 경충대로 2091
소재지-1 충청북도 청주시 흥덕구 대신로 215
소재지-2 경기도 수원시 영통구 광교로 109
부속시설-1 경기도 이천시 부발읍 경충대로 2091
담당자 김희준
전화 번호 031-8094-8218
팩스 번호 031-8094-8240
인정범위 전기시험
규격번호
(Test method)		 규격명
(Standard designation)		 시험범위
(Test Range)		 사업장
(Site)
▶ 환경 및 신뢰성
AEC-Q100-005-REV-D1:2012 NON-VOLATILE MEMORY PROGRAM/ERASE
ENDURANCE, DATA RETENTION, AND
OPERATIONAL LIFE TEST
(제외)
3.6 Measurements
4 Failure criteria		 Temperature :
(55 ~ 150) ℃		 소재지
JESD22-A103E.01:2021 HIGH TEMPERATURE STORAGE LIFE
(제외)
4.2 Measurements
4.3 Failure criteria		 Temperature :
(125 ~ 300) ℃		 소재지-1
JESD22-A104F.01:2023 TEMPERATURE CYCLING
(제외)
5.9 Measurements
6 Failure criteria		 Temperature :
(-65 ~ 150) ℃		 소재지-1
JESD22-A105D:2020 POWER AND TEMPERATURE CYCLING
(제외)
4.4 Measurements
5 Failure criteria		 Temperature :
(-40 ~ 125) ℃		 소재지-1
JESD22-A108G:2022 TEMPERATURE, BIAS, AND OPERATING LIFE
(제외)
6 Measurements
7 Failure criteria		 Temperature :
(-40 ~ 200) ℃		 소재지-1
JESD22-A110E.01:2021 HIGHLY ACCELERATED TEMPERATURE AND
HUMIDITY STRESS TEST (HAST)
(제외)
5 Failure criteria		 Temperature:（110 ~ 130) ℃
Humidity : 85 % R.H.
Vapor Pressure : (122 ~ 230) kPa		 소재지-1
JESD22-A113I:2020 PRECONDITIONING OF NONHERMETIC SURFACE
MOUNT DEVICES PRIOR TO RELIABILITY
TESTING
(제외)
4.1 Initial electrical test
4.10 Final electrical test		 Temperature Cycling
Temperature : (-40 ~ 150) ℃
Bake out
Temperature : 125 ℃
Moisture Soak
Temperature: (30 ~ 85) ℃
Humidity: (60 ~ 85) % R.H
Reflow
Peak Temperature.: Max. 260 ℃		 소재지-1
JESD22-A117E:2018 ELECTRICALLY ERASABLE PROGRAMMABLE ROM
(EEPROM) PROGRAM/ERASE ENDURANCE AND
DATA RETENTION STRESS TEST
(제외)
4.1.3 Electrical test verification
4.4 Measurements
5 Failure criteria and calculation		 Temperature :
(55 ~ 150) ℃		 소재지-1
JESD22-A118B.01:2021 ACCELERATED MOISTURE RESISTANCE -
UNBIASED HAST
(제외)
5 Failure criteria		 Temperature:（110 ~ 130) ℃
Humidity : 85 % R.H.
Vapor Pressure : (122 ~ 230) kPa		 소재지-1
JESD22-A119A:2015 LOW TEMPERATURE STORAGE LIFE
(제외)
3.2 Measurements
3.3 Failure criteria		 Temperature :
(-40 ~ -65) ℃		 소재지-1
JESD22-B101D:2022 EXTERNAL VISUAL
(제외)
6 Failure criteria		 Magnification :
Max. 100 X		 소재지-1
JESD74A:2007 EARLY LIFE FAILURE RATE CALCULATION
PROCEDURE FOR SEMICONDUCTOR
COMPONENTS
(제외)
4.4 Failure analysis		 Temperature :
(55 ~ 150) ℃		 소재지-1
MIL-STD-202H:2015 DEPARTMENT OF DEFENSE TEST METHOD STANDARD ELECTRONIC AND ELECTRICAL COMPONENT PARTS
103 Humidity (steady state)
107 Thermal shock
(제외)
Table III. Thermal Shock conditions(liquid)
108 Life (at elevated ambient temperature)
(제외)
4.3 Measurements		 103 : Conditioning Temperature : 40 ℃ Exposure Humidity : (90 ~ 95) % R.H. Temperature : 40 ℃

107 : (-65 ~ 150) ℃

108 : (70 ~ 200) ℃		 소재지-1
MIL-STD-810H:2019 DEPARTMENT OF DEFENSE TEST METHOD STANDARD ENVIRONMENTAL ENGINEERING CONSIDERATIONS AND LABORATORY TESTS
501.7 High Temperature
(제외)
2.2.2 Procedure III Tactical-Standby to Operational

502.7 Low Temperature
(제외)
2.2.2 Procedure III Manipulation

503.7 Temperature Shock

507.6 Humidity
Table 507.6-VIII Hot Humid - Natural Cycle B3.
Table 507.6-IX Aggravated cycle		 501.7 : (30 ~ 71) ℃

502.7 : (-61 ~ -21) ℃

503.7 : (-61 ~ 71) ℃

507.6 :
Humidity:(30 ~ 95) % R.H. ,
Temperature:(30 ~ 60) ℃		 소재지-1
AEC-Q100-002-REV-E:2013 HUMAN BODY MODEL (HBM) ELECTROSTATIC
DISCHARGE TEST		 Voltage :
(50 ~ 8 000) V		 소재지-2
AEC-Q100-004-REV-D:2012 IC LATCH-UP TEST
(제외)
5. Failure criteria		 Current : Max 2 A
Voltage : Max 100 V		 소재지-2
AEC-Q100-011-REV-D:2019 CHARGED DEVICE MODEL (CDM)
ELECTROSTATIC DISCHARGE TEST
(제외)
3.2.3 Relay Discharge Method
3.4 Measurements
4 Failure criteria		 Voltage :
(50 ~ 2 000) V		 소재지-2
AEC-Q101-001-REV-A:2005 HUMAN BODY MODEL (HBM) ELECTROSTATIC
DISCHARGE(ESD) TEST
(제외)
3.4 Measurements
4 Failure criteria		 Voltage :
(50 ~ 8 000) V		 소재지-2
AEC-Q101-005-REV-A:2019 CHARGED DEVICE MODEL (CDM)
ELECTROSTATIC DISCHARGE(ESD) TEST
(제외)
3.4 Measurements
4 Failure criteria		 Voltage :
(50 ~ 2 000) V		 소재지-2
ANSI/ESDA/JEDECJS-001-2017 FOR ELECTROSTATIC
DISCHARGE
(ESD)SENSITIVITY
TESTING HUMAN BODY
MODEL (HBM) -
COMPONENT LEVEL
(제외)
6.1 Parametric and Functional Testing
6.7 Testing After Stressing
7.0 Failure criteria		 Voltage :
(50 ~ 8 000) V		 소재지-2
JESD22-A115C:2010 ELECTROSTATIC DISCHARGE (ESD)
SENSITIVITY TESTING MACHINE MODEL (MM)
(제외)
5 Failure criteria		 Voltage :
(50 ~ 1 500) V		 소재지-2
JESD22-C101F:2013 FIELD-INDUCED CHARGED-DEVICE MODEL
TEST METHOD FOR ELECTROSTATIC
DISCHARGE WITHSTAND THRESHOLDS OF
MICRO ELECTRONIC COMPONENTS
(제외)
11 Failure criteria		 Voltage :
(50 ~ 2 000) V		 소재지-2
JESD78F:2022 IC LATCH-UP TEST
(제외)
5 Latch-up detection criteria		 Current : Max 2 A
Voltage : Max 100 V		 소재지-2
ANSI/ESDA/JEDEC JS-002-2018 FOR ELECTROSTATIC DISCHARGE
SENSITIVITY TESTING CHARGE
DEVICE MODEL (CDM) - DEVICE
LEVEL
(제외)
7.7.2 Device Test
7.2.2.1 Pre-Stress Testing
7.2.2.2 Failure criteria		 Voltage :
(50 ~ 2 000) V		 소재지-2
JESD22-A102E:2015 ACCELERATED MOISTURE RESISTANCE
UNBIASED AUTOCLAVE
(제외)
5 Failure criteria		 Temperature :121 ℃
Humidity :100 % R.H.
vapor Pressure :205 kPa		 소재지-1
JESD22-A101D.01:2021 STEADY STATE TEMPERATURE HUMIDITY BIAS
LIFE TEST
(제외)
5 Failure criteria		 Temperature : 85 ℃
Humidity : 85 % R.H.		 소재지-1
IPC/JEDEC J-STD-020F:2022 MOISTURE/REFLOW SENSITIVITY
CLASSIFICATION FOR NONHERMETIC
SURFACE MOUNT DEVICES
(제외)
3.6 Electrical test
5.2 Initial electrical test
5.8 Final electrical test		 Bake
Temperature : 125 ℃
Moisture Soak
Temperature: (30 ~ 85) ℃
Humidity : (60 ~ 85) % R.H
Reflow
Peak Temperature : Max. 260 ℃		 소재지
AEC-Q100-008-REV-A:2003 EARLY LIFE FAILURE RATE (ELFR)
(제외)
3.3 Acceptance Criteria
3.4 Sample Disposition		 Temperature :
(55 ~ 150) ℃		 소재지
IPC/JEDEC J-STD-020F:2022 MOISTURE/REFLOW SENSITIVITY
CLASSIFICATION FOR NONHERMETIC
SURFACE MOUNT DEVICES
(제외)
3.6 Electrical test
5.2 Initial electrical test
5.8 Final electrical test		 Bake
Temperature : 125 ℃
Moisture Soak
Temperature: (30 ~ 85) ℃
Humidity : (60 ~ 85) % R.H
Reflow
Peak Temperature : Max. 260 ℃		 소재지-1
JESD22-A101D.01:2021 STEADY STATE TEMPERATURE HUMIDITY BIAS
LIFE TEST
(제외)
5 Failure criteria		 Temperature : 85 ℃
Humidity : 85 % R.H.		 소재지
JESD22-A102E:2015 ACCELERATED MOISTURE RESISTANCE
UNBIASED AUTOCLAVE
(제외)
5 Failure criteria		 Temperature :121 ℃
Humidity :100 % R.H.
vapor Pressure :205 kPa		 소재지
JESD22-A103E.01:2021 HIGH TEMPERATURE STORAGE LIFE
(제외)
4.2 Measurements
4.3 Failure criteria		 Temperature :
(125 ~ 300) ℃		 소재지
JESD22-A104F.01:2023 TEMPERATURE CYCLING
(제외)
5.9 Measurements
6 Failure criteria		 Temperature :
(-65 ~ 150) ℃		 소재지
JESD22-A105D:2020 POWER AND TEMPERATURE CYCLING
(제외)
4.4 Measurements
5 Failure criteria		 Temperature :
(-40 ~ 125) ℃		 소재지
JESD22-A106B.02:2022 THERMAL SHOCK
(제외)
4.2 Measurements
4.3 Failure criteria		 Temperature :
(-65 ~ 150) ℃		 소재지
JESD22-A108G:2022 TEMPERATURE, BIAS, AND OPERATING LIFE
(제외)
6 Measurements
7 Failure criteria		 Temperature :
(-40 ~ 200) ℃		 소재지
JESD22-A110E.01:2021 HIGHLY ACCELERATED TEMPERATURE AND
HUMIDITY STRESS TEST (HAST)
(제외)
5 Failure criteria		 Temperature:（110 ~ 130) ℃
Humidity : 85 % R.H.
Vapor Pressure : (122 ~ 230) kPa		 소재지
JESD22-A113I:2020 PRECONDITIONING OF NONHERMETIC SURFACE
MOUNT DEVICES PRIOR TO RELIABILITY
TESTING
(제외)
4.1 Initial electrical test
4.10 Final electrical test		 Temperature Cycling
Temperature : (-40 ~ 150) ℃
Bake out
Temperature : 125 ℃
Moisture Soak
Temperature: (30 ~ 85) ℃
Humidity: (60 ~ 85) % R.H
Reflow
Peak Temperature.: Max. 260 ℃		 소재지
JESD22-A117E:2018 ELECTRICALLY ERASABLE PROGRAMMABLE ROM
(EEPROM) PROGRAM/ERASE ENDURANCE AND
DATA RETENTION STRESS TEST
(제외)
4.1.3 Electrical test verification
4.4 Measurements
5 Failure criteria and calculation		 Temperature :
(55 ~ 150) ℃		 소재지
JESD22-A118B.01:2021 ACCELERATED MOISTURE RESISTANCE -
UNBIASED HAST
(제외)
5 Failure criteria		 Temperature:（110 ~ 130) ℃
Humidity : 85 % R.H.
Vapor Pressure : (122 ~ 230) kPa		 소재지
JESD22-A119A:2015 LOW TEMPERATURE STORAGE LIFE
(제외)
3.2 Measurements
3.3 Failure criteria		 Temperature :
(-40 ~ -65) ℃		 소재지
JESD22-B101D:2022 EXTERNAL VISUAL
(제외)
6 Failure criteria		 Magnification :
Max. 100 X		 소재지
JESD22-B110B.01:2019 MECHANICAL SHOCK – DEVICE AND
SUBASSEMBLY
(제외)
4.3 Measurements
5 Failure criteria		 Acceleration Peak:
(1 000 ~ 29 000) ㎨		 소재지
JESD22-B113B:2018 BOARD LEVEL CYCLIC BEND TEST METHOD FOR
INTERCONNECT RELIABILITY
CHARACTERIZATION OF SMT ICS FOR HANDHELD ELECTRONIC PRODUCT
(제외)
10 Electrical monitoring requirements and
failure criteria		 Frequency : (1 ~ 3) Hz
Depth : (2 ~ 4) mm		 소재지
JESD74A:2007 EARLY LIFE FAILURE RATE CALCULATION
PROCEDURE FOR SEMICONDUCTOR
COMPONENTS
(제외)
4.4 Failure analysis		 Temperature :
(55 ~ 150) ℃		 소재지
JESD22-B103B.01:2016 VIBRATION, VARIABLE FREQUENCY
(제외)
4.3 Optional stress application - Random vibration test (cont’d)
Table 2 - Overall measures of random vibration test levels
; Service condition A, B
4.4 Measurements
5 Failure Criteria		 Frequency :
(10 ~ 2 000) Hz
Acceleration :
(10 ~ 500) ㎨		 소재지
MIL-STD-810H:2019 DEPARTMENT OF DEFENSE TEST METHOD STANDARD ENVIRONMENTAL ENGINEERING CONSIDERATIONS AND LABORATORY TESTS
501.7 High Temperature
(제외)
2.2.2 Procedure III Tactical-Standby to Operational
502.7 Low Temperature
(제외)
2.2.2 Procedure III Manipulation
503.7 Temperature Shock
507.6 Humidity
Table 507.6-VIII Hot Humid - Natural Cycle B3.
Table 507.6-IX Aggravated cycle
509.7 Salt Fog		 501.7 : (30 ~ 71) ℃

502.7 : (-61 ~ -21) ℃

503.7 : (-61 ~ 71) ℃

507.6 : (30 ~ 95) % R.H. , (30 ~ 60) ℃

509.7 : Temperature 35 ℃ , Salt solution : 5 %		 소재지
MIL-STD-202H:2015 DEPARTMENT OF DEFENSE TEST METHOD STANDARD
ELECTRONIC AND ELECTRICAL COMPONENT PARTS
101 Salt atmosphere (corrosion)
(제외)
4.2 Preperation of specimen
5.2 Measurement
103 Humidity (steady state)
107 Thermal shock
108 Life (at elevated ambient temperature)
(제외)
4.3 Measurements
201 Vibration
(제외)
5.1 Measurements
204 Vibration, high frequency
(제외)
4.7 Test condition F (3 000 Hz)
4.9 Test condition H (80g peak)
4.10 Alternate procedure for use of linear in place of logarithmic change of frequency
5.1 Measurements		 101 : Temperature 35 ℃ , Salt solution : 5 %

103 : Conditioning Temperature : 40 ℃ , Exposure Humidity : (90 ~ 95) % R.H.
Temperature : 40 ℃

107 : (-65 ~ 150) ℃

108 : (70 ~ 200) ℃

201 : Frequency : (10 ~ 55) Hz, Displacement max 1.5 mm

204 : Frequency : (10 ~ 2 000) Hz , Acceleration : (100 ~ 500) m/s²		 소재지
AEC-Q100-005-REV-D1:2012 NON-VOLATILE MEMORY PROGRAM/ERASE
ENDURANCE, DATA RETENTION, AND
OPERATIONAL LIFE TEST
(제외)
3.6 Measurements
4 Failure criteria		 Temperature :
(55 ~ 150) ℃		 소재지-1
AEC-Q100-008-REV-A:2003 EARLY LIFE FAILURE RATE (ELFR)
(제외)
3.3 Acceptance Criteria
3.4 Sample Disposition		 Temperature :
(55 ~ 150) ℃		 소재지-1
MIL-STD-750-1B:2023 DEPARTMENT OF DEFENSE TEST METHOD STANDARD ENVIRONMENTAL TEST METHODS FOR SEMICONDUCTOR DEVICES
1026.5 STEADY-STATE OPERATION LIFE
1032.2 HIGH–TEMPERATURE (NONOPERATING) LIFE (SAMPLE PLAN)
1037.3 INTERMITTENT OPERATION LIFE (SAMPLE PLAN)
1038.5 BURN–IN (FOR DIODES, RECTIFIERS, AND ZENERS)
1041.4 SALT ATMOSPHERE (CORROSION)
1051.9 TEMPERATURE CYCLING (AIR TO AIR) (제외) 3.1 Table condition D, E
1056.8 THERMAL SHOCK (LIQUID TO LIQUID)		 1026.5 : Temperature : (50 ~ 200) ℃
1032.2 : Temperature : (125 ~ 300) ℃
1037.3 : Current range : 20 A, ΔTj > 100 ℃
1038.5 : Temperature : (50 ~ 200) ℃
1041.4 : Temperature 35 ℃ , Salt solution : 5 %
1051.9 : Test condition A, B, C, F. G Temperature : (-55 ~ 175 ℃)
1056.8 : Temperature : (-65 ~ 150 ℃)		 소재지
MIL-STD-750-2B:2023 DEPARTMENT OF DEFENSE TEST METHOD STANDARD MECHANICAL TEST METHODS FOR SEMICONDUCTOR DEVICES
2006.2 CONSTANT ACCELERATION
2016.2 SHOCK
2026.14 SOLDERABILITY
(제외)
2.1 Test conditions. B. Test condition H is a hand soldering procedure
2056.3 VIBRATION, VARIABLE FREQUENCY
2066 PHYSICAL DIMENSIONS
2071.1 VISUAL AND MECHANICAL EXAMINATION
2073.2 VISUAL INSPECTION FOR DIE (SEMICONDUCTOR DIODE)
2076.5 RADIOGRAPHY		 2006.2 Stress level : (50 000 ~ 300 000) m/s²
2016.2 Shock level : (5 000 ~ 29 000) m/s²
2026.14 Temperature : 150 ~ 250 ℃
2056.3 Frequency : (20 ~ 2 000) Hz Acceleration : 200 m/s²
2066 Range : Max. 300 mm
2071.1 Magnification : Max. 200 X
2073.2 Magnification : Max. 200 X
2076.5 Voltage range : Max. 90 kV		 소재지
MIL-STD-883-1:2024 DEPARTMENT OF DEFENSE
TEST METHOD STANDARD
ENVIRONMENTAL TEST METHODS FOR MICROCIRCUITS
1005.11 STEADY STATE LIFE
1008.2 STABILIZATION BAKE
1009.9 SALT ATMOSPHERE (CORROSION)
1010.9 TEMPERATURE CYCLING
1011.1 THERMAL SHOCK
1014.19 SEAL
1015.12 BURN-IN TEST		 1005.11 : Temperature : (55 ~ 200) °C
1008.2 : Temperature : (75 ~ 250) °C
1009.9 : Temperature 35 °C, Salt solution : 0.5 ~ 3.0%
1010.9 : Temperature : (-65 ~ 175) °C
1011.1 : Temperature : (-65 ~ 150) °C
1014.19 : Condition C4, C5 : (Optical leak test)
1015.12 : Temperature : (55 ~ 200) °C		 소재지
MIL-STD-883-2:2022 DEPARTMENT OF DEFENSE TEST METHOD STANDARD MECHANICAL TEST METHODS FOR MICROCIRCUITS
2001.4 CONSTANT ACCELERATION
2002.5 MECHANICAL SHOCK
2004.7 LEAD INTEGRITY
2007.3 VIBRATION, VARIABLE FREQUENCY
2009.15 EXTERNAL VISUAL
2010.14 INTERNAL VISUAL (MONOLITHIC)
2012.11 RADIOGRAPHY
2013.1 INTERNAL VISUAL INSPECTION FOR DPA
2014 INTERNAL VISUAL AND MECHANICAL
2016 PHYSICAL DIMENSIONS
2020.9 PARTICLE IMPACT NOISE DETECTION TEST
2036.1 RESISTANCE TO SOLDERING HEAT		 2001.4 : Stress level : (50 000 ~ 300 000)m/s²
2002.5 : Shock level : (500 ~ 300 000) m/s²
2004.7 : Condition A : (Tension 0.227kgf, 30 sec) Acceleration: (200) m/s²
2007.3 : Frequency : (20 ~ 2000) Hz
2009.15 : Magnification : Max. 200 X
2010.14 : Magnification : Max. 200 X
2012.11 : Voltage range : Max. 90 kV
2013.1 : Magnification : Max. 200 X
2014 : Magnification : Max. 200 X
2016 : Range : 300 mm
2020.9 : Frequency : (40 ~ 265) Hz Acceleration: (100 ~ 200) m/s² Shock level: (1 000) m/s²
2036.1 : Condition : B(Dip)		 소재지
MIL-STD-883-3:2025 DEPARTMENT OF DEFENSE
TEST METHOD STANDARD
ELECTRICAL TESTS (DIGITAL)
FOR MICROCIRCUITS
PART 3: TEST METHODS
3000-3999

METHOD 3015.9 ELECTROSTATIC DISCHARGE
SENSITIVITY CLASSIFICATION		 Voltage : (50 ~ 8 000) V 소재지-2
MIL-STD-750-1B:2023 DEPARTMENT OF DEFENSE
TEST METHOD STANDARD
ENVIRONMENTAL TEST
METHODS FOR
SEMICONDUCTOR DEVICES
PART 1: TEST METHOD 1000
THROUGH 1999

METHOD 1020.7 ELECTROSTATIC DISCHARGE
SENSITIVITY (ESD)
CLASSIFICATION		 Voltage : (50 ~ 8 000) V 소재지-2
MIL-STD-750-1B:2023 DEPARTMENT OF DEFENSE TEST METHOD STANDARD ENVIRONMENTAL TEST METHODS FOR SEMICONDUCTOR DEVICES
1027.3 STEADY-STATE OPERATION LIFE (SAMPLE PLAN)
1039.4 BURN-IN (FOR TRANSISTORS)
1040 BURN-IN (FOR THYRISTORS (CONTROLLED RECTIFIERS))
1042.4 BURN-IN AND LIFE TEST FOR POWER MOSFETS OR INSULATED GATE BIPOLAR TRANSISTORS (IGBT)
1048.1 BLOCKING LIFE
1071.18 HERMETIC SEAL		 1027.3 : Temperature : (55 ~ 200) °C
1039.4 : Temperature : (55 ~ 200) ℃
1040 : Temperature : (55 ~ 200) °C
1042.4 : Temperature : (55 ~ 200) °C
1048.1 : Temperature : (55 ~ 200) °C
1071.18 : Condition L1, L2 : (Optical leak test)		 소재지
MIL-STD-750-2B:2023 DEPARTMENT OF DEFENSE TEST METHOD STANDARD MECHANICAL TEST METHODS FOR SEMICONDUCTOR DEVICES
2031.7 RESISTANCE TO SOLDERING HEAT
2068.1 EXTERNAL VISUAL FOR NONTRANSPARENT GLASS-ENCASED, DOUBLE PLUG, NONCAVITY AXIAL LEADED DIODES
2069.2 PRE-CAP VISUAL, POWER MOSFET'S
2070.2 PRE-CAP VISUAL MICROWAVE DISCRETE AND MULTICHIP TRANSISTORS
2072.9 INTERNAL VISUAL TRANSISTOR (PRE-CAP) INSPECTION
2074.7 INTERNAL VISUAL INSPECTION (DISCRETE SEMICONDUCTOR DIODES)
2075.1 DECAP INTERNAL VISUAL DESIGN VERIFICATION		 2031.7 : Condition : B(Dip)
2068.1 : Magnification : Max. 200X
2069.2 : Magnification : Max. 200X
2070.2 : Magnification : Max. 200X
2072.9 : Magnification : Max. 200X
2074.7 : Magnification : Max. 200X
2075.1 : Magnification : Max. 200X		 소재지
AEC-Q100-002-REV-E:2013 HUMAN BODY MODEL (HBM) ELECTROSTATIC
DISCHARGE TEST		 Voltage :
(50 ~ 8 000) V		 부속시설-1
AEC-Q100-004-REV-D:2012 IC LATCH-UP TEST
(제외)
5. Failure criteria		 Current : Max 2 A
Voltage : Max 100 V		 부속시설-1
AEC-Q100-011-REV-D:2019 CHARGED DEVICE MODEL (CDM)
ELECTROSTATIC DISCHARGE TEST
(제외)
3.2.3 Relay Discharge Method
3.4 Measurements
4 Failure criteria		 Voltage :
(50 ~ 2 000) V		 부속시설-1
AEC-Q101-001-REV-A:2005 HUMAN BODY MODEL (HBM) ELECTROSTATIC
DISCHARGE(ESD) TEST
(제외)
3.4 Measurements
4 Failure criteria		 Voltage :
(50 ~ 8 000) V		 부속시설-1
AEC-Q101-005-REV-A:2019 CHARGED DEVICE MODEL (CDM)
ELECTROSTATIC DISCHARGE(ESD) TEST
(제외)
3.4 Measurements
4 Failure criteria		 Voltage :
(50 ~ 2 000) V		 부속시설-1
ANSI/ESDA/JEDECJS-001-2017 ELECTROSTATIC DISCHARGE (ESD)SENSITIVITY
TESTING HUMAN BODY MODEL (HBM) -
COMPONENT LEVEL
(제외)
6.1 Parametric and Functional Testing
6.7 Testing After Stressing
7.0 Failure criteria		 Voltage :
(50 ~ 8 000) V		 부속시설-1
JESD22-A115C:2010 ELECTROSTATIC DISCHARGE (ESD)
SENSITIVITY TESTING MACHINE MODEL (MM)
(제외)
5 Failure criteria		 Voltage :
(50 ~ 1 500) V		 부속시설-1
JESD22-C101F:2013 FIELD-INDUCED CHARGED-DEVICE MODEL
TEST METHOD FOR ELECTROSTATIC
DISCHARGE WITHSTAND THRESHOLDS OF
MICRO ELECTRONIC COMPONENTS
(제외)
11 Failure criteria		 Voltage :
(50 ~ 3 000) V		 부속시설-1
JESD78F:2022 IC LATCH-UP TEST
(제외)
5 Latch-up detection criteria		 Current : Max 2 A
Voltage : Max 100 V		 부속시설-1
ANSI/ESDA/JEDEC JS-002-2018 ELECTROSTATIC DISCHARGE SENSITIVITY TESTING CHARGE DEVICE MODEL (CDM) - DEVICE LEVEL (제외) 7.7.2 Device Test 7.2.2.1 Pre-Stress Testing 7.2.2.2 Failure criteria Voltage :
(50 ~ 2 000) V		 부속시설-1

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